收藏本站
December 2013
FCPF7N60NT
N-Channel MOSFET
600 V, 6.8 A, 0.52 Ω
Features
? Typ R DS(on) = 460m Ω
? Ultra Low Gate Charge (typ. Q g = 17.8 nC)
? Low Effective Output Capacitance (typ. C oss(eff.) = 91 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology em-
ploying a deep trench filling process that differentiates it from the
conventional SJ MOSFETs. This advanced technology and pre-
cise process control provides lowest Rsp on-resistance, superior
switching performance and ruggedness. SupreMOS MOSFET is
suitable for high frequency switching power converter applica-
tions such as PFC, server/telecom power, FPD TV power, ATX
power, and industrial power applications.
? Solar Inverter
? AC-DC Power Supply
D
D
G
S
TO-220F
G
MOSFET Maximum Ratings T C = 25 C unless otherwise noted.
S
o
Symbol
V DSS
Drain to Source Voltage
Parameter
FCPF7N60NT
600
Units
V
V GSS
I D
Gate to Source Voltage
Drain Current
-Continuous (T C = 25 o C)
-Continuous (T C = 100 o C)
±30
6.8*
4.3*
V
A
I DM
E AS
I AR
E AR
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
- Pulsed
(Note 1)
(Note 2)
20.4
79.4
6.8
0.6
A
mJ
A
mJ
dv/dt
P D
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 3)
100
4.9
30.5
0.24
V/ns
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCPF7N60NT
4.1
62.5
Units
o C/W
?2012 Fairchild Semiconductor Corporation
FCPF7N60NT Rev. C2
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FCPF7N60T MOSFET N-CH 600V 7A TO-220F
FCTN-RLY4-418-MOM MODULE MOM RECEIVER 418MHZ
FCTN-WALL-433 MODULE AC SWITCH RECEIVER 433MHZ
FCX11362_IRIS LENS FOR CREE XP-E/G
FDA032N08 MOSFET N-CH 75V 120A TO-3P
FDA15N65 MOSFET N-CH 650V 16A TO-3PN
FDA16N50_F109 MOSFET N-CH 500V 16.5A TO-3P
FDA18N50 MOSFET N-CH 500V 19A TO-3P
相关代理商/技术参数
FCPF7N60T 功能描述:MOSFET N-CH 600V 7A TO-220F RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SuperFET™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
FCPF7N60YDTU 功能描述:MOSFET 600V N-Channel SuperFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPF9N60NT 功能描述:MOSFET SupreMOS 9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPH1280-10 制造商:SYNERGY 制造商全称:SYNERGY MICROWAVE CORPORATION 功能描述:FIXED FREQUENCY SYNTHESIZER
FCPH243250-100 制造商:SYNERGY 制造商全称:SYNERGY MICROWAVE CORPORATION 功能描述:SELECTABLE FREQUENCY SYNTHESIZER
FCPI120 制造商: 功能描述: 制造商:undefined 功能描述:
FCPI1-C20 功能描述:电缆固定件和配件 Flat Cable Plate, 1" (25.4mm) W Cable, B RoHS:否 制造商:Heyco 类型:Cable Grips, Liquid Tight 材料:Nylon 颜色:Black 安装方法:Cable 最大光束直径:11.4 mm 抗拉强度:
FCPI1-M20 功能描述:电缆固定件和配件 Flat Cable Plate, 1" (25.4mm) W Cable, B RoHS:否 制造商:Heyco 类型:Cable Grips, Liquid Tight 材料:Nylon 颜色:Black 安装方法:Cable 最大光束直径:11.4 mm 抗拉强度: